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    Floating Silicon Method

  • Silicon-on-nothing fabrication processpatents

    A method to fabricate a silicon-on-nothing device on a silicon substrate is provided. The disclosed silicon-on-nothing device is fabricated on an isolated floating

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  • A New Method for Research of Grown-In Microdefects

    mm grown by floating-zone and Czochralski methods. Keywords Silicon, Grown-In Microdefects, Precipitate, Vacancy Microvoid, (Czochralski method or the floating Authors V I Talanin · I E Talanin · N Ph UstimenkoAffiliation Classic Private UniversityAbout Silicon · Precipitation

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  • Silicon Info Single-Crystal Ingot GrowthSiliconsultant

    Silicon Info Single-Crystal Ingot Growth. The single-crystal growth methods, float-zoning (FZ) and Czochralski growth (CZ), are relatively well-known, so

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  • Floating Silicon Method single crystal ribbon

    In the Floating Silicon Method (FSM), a single-crystal Si ribbon is grown while floating on the surface of a Si melt. In this paper, we describe the phenomenology of

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  • Towards implementation of floating cast method for

    Previous article in issue Boron-doped selective silicon epitaxy high efficiency and process simplification in interdigitated back contact cells Previous article in Published in Progress in Photovoltaics · 2014Authors Supawan Joonwichien · Isao Takahashi · Satoru Matsushima · Noritaka Affiliation Nagoya UniversityAbout Crystallization

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  • Method for forming a floating gate memory with

    Methods and apparatus are described to facilitate forming memory devices with low resistance polysilicon local interconnects silicon substrate. The floating

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  • Floating Silicon Method (Technical Report) SciTech

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a Authors Peter L KellermanAffiliation Varian SemiconductorAbout Materials Science

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  • Floating Zone Growth of SiliconHandbook of Crystal

    The floating zone (FZ) technique changed from a crucible-free purification method into a growth technique mainly for high purity silicon crystals. The melt zone

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  • Floating gated silicon-on-insulator nonvolatile memory

    Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators were fabricated. The tunneling SiO1.3N insulator

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  • Floating Silicon Method Single Crystal Ribbon

    In the Floating Silicon Method (FSM), a single-crystal Si ribbon is grown while floating on the surface of a Si melt. In this paper, we describe the phenomenology of

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  • Apparatus for producing a silicon single crystal by a

    A method of producing a silicon single crystal by the floating-zone method, comprising the steps of providing a polysilicon rod having an average grain length of 10

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  • Floating Zone MethodSukhwant Jhaj

    Floating Zone Method . Fig. 8 illustrates the floating zone crystal pulling method. · When extremely high purity silicon is required the growth technique of

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  • Floating Cast Method as a New Growth Method of Silicon

    On , I. Takahashi (and others) published the chapter Floating Cast Method as a New Growth Method of Silicon Bulk Multicrystals for Solar Cells in the book

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  • Float-zone siliconWikipedia

    Float-zone silicon Float-zone silicon is The process was developed at Bell Labs by Henry Theuerer in 1955 as a modification of a method developed by William

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  • Silicon Float-Zone Crystal Growth as a Tool for the

    Silicon Float-Zone Crystal Growth as a Tool for the Study of Defects and Impurities the float-zone method lends itself to

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  • Patent US4556448Method for controlled doping of silicon

    An apparatus and method are described for incorporating doping material into a single silicon crystal by an improved float zone (FZ) crystal growth method. A solid

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  • 12 Floating Cast Method as a New Growth Method of Silicon

    12 Floating Cast Method as a New Growth Method of Silicon Bulk Multicrystals for Solar Cells I. Takahashi, Y. Nose, N. Usami, K. Fujiwara, and K. Nakajima

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  • Patent US20080157162Method of combining floating

    An integrated circuit having both floating body cells and logic devices fabricated in a bulk silicon substrate is described. The floating body cells have electrically

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  • Patent EP1650158A1Silicon-on-insulator substrate, its

    A method for fabricating the floating structure is also disclosed hole is filled with a part of the silicon layer. A method for fabricating the floating

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  • floating silicon methodgoldenassociate

    Influence of Silicon Dioxide Doping on Morphology of . Influence of Silicon Dioxide Doping on Morphology of Silicon Nanowires Grown by Floating Zone Method Author

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